| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | G3S06504BSIC SCHOTTKY DIODE 650V 4A 3-PIN | 8,040 | 3.20 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 9A (DC) | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G3S06506BSIC SCHOTTKY DIODE 650V 6A 3-PIN | 8,688 | 5.22 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G3S06508BSIC SCHOTTKY DIODE 650V 8A 3-PIN | 7,775 | 5.36 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G3S06512BSIC SCHOTTKY DIODE 650V 12A 3-PI | 7,813 | 6.93 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G3S12004BSIC SCHOTTKY DIODE 1200V 4A 3-PI | 5,738 | 6.98 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 8.5A (DC) | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G3S06510BSIC SCHOTTKY DIODE 650V 10A 3-PI | 5,254 | 7.46 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G4S06516BTSIC SCHOTTKY DIODE 650V 16A 3-PI | 5,429 | 7.97 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G3S12006BSIC SCHOTTKY DIODE 1200V 6A 3-PI | 1,149 | 10.14 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G3S06516BSIC SCHOTTKY DIODE 650V 16A 3-PI | 4,891 | 10.21 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.5A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G4S06520BTSIC SCHOTTKY DIODE 650V 20A 3-PI | 4,010 | 12.58 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 31.2A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G5S12016BSIC SCHOTTKY DIODE 1200V 16A 3-P | 4,853 | 14.47 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G5S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P | 2,136 | 14.47 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G5S12016BMSIC SCHOTTKY DIODE 1200V 16A 3-P | 3,122 | 14.83 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G3S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P | 4,201 | 15.37 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.8A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G3S12010BSIC SCHOTTKY DIODE 1200V 10A 3-P | 2,639 | 16.67 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 39A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G4S06530BTSIC SCHOTTKY DIODE 650V 30A 3-PI | 3,595 | 16.81 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 39A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | 
|   | G5S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P | 1,058 | 22.59 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G3S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P | 1,506 | 22.96 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 37A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G5S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P | 3,358 | 24.72 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 
|   | G4S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P | 3,269 | 31.70 | FFQ |   Datasheet | Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33.2A (DC) | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | 

All Anmsi components are from the original factory or agent Regular channel procurement

Enables us to resolve all shortages of customers.efficient BOM materials offer and professional technical support.