Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
IV1D06006P3

IV1D06006P3

SIC DIODE, 650V 6A, DPAK

Inventchip

5,344 4.52

FFQ

IV1D06006P3

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 224pF @ 1V, 1MHz 0 ns 10 µA @ 650 V 650 V 16.7A (DC) -55°C ~ 175°C 1.65 V @ 6 A
IV1D12010T2

IV1D12010T2

SIC DIODE, 1200V 10A, TO-247-2

Inventchip

3,110 11.78

FFQ

IV1D12010T2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 575pF @ 1V, 1MHz 0 ns 50 µA @ 1200 V 1200 V 30A (DC) -55°C ~ 175°C (TJ) 1.8 V @ 10 A
IV1D12010O2

IV1D12010O2

SIC DIODE, 1200V 10A, TO-220-2

Inventchip

3,914 11.78

FFQ

IV1D12010O2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 575pF @ 1V, 1MHz 0 ns 50 µA @ 1200 V 1200 V 28A (DC) -55°C ~ 175°C (TJ) 1.8 V @ 10 A
IV1D12015T2

IV1D12015T2

SIC DIODE, 1200V 15A, TO-247-2

Inventchip

3,328 14.55

FFQ

IV1D12015T2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 888pF @ 1V, 1MHz 0 ns 80 µA @ 1200 V 1200 V 44A (DC) -55°C ~ 175°C 1.8 V @ 15 A
IV1D06006O2

IV1D06006O2

SIC DIODE, 650V 6A, TO-220-2

Inventchip

6,446 4.37

FFQ

IV1D06006O2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 212pF @ 1V, 1MHz 0 ns 10 µA @ 650 V 650 V 17.4A (DC) -55°C ~ 175°C 1.65 V @ 6 A
IV1D12005O2

IV1D12005O2

SIC DIODE, 1200V 5A, TO-220-2

Inventchip

8,897 6.54

FFQ

IV1D12005O2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 320pF @ 1V, 1MHz 0 ns 30 µA @ 1200 V 1200 V 17A (DC) -55°C ~ 175°C 1.8 V @ 5 A
IV1D12020T2

IV1D12020T2

SIC DIODE, 1200V 20A, TO-247-2

Inventchip

4,628 19.17

FFQ

IV1D12020T2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1114pF @ 1V, 1MHz 0 ns 120 µA @ 1200 V 1200 V 54A -55°C ~ 175°C 1.8 V @ 20 A
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  • Quality assurance, Original authentic

    Quality assurance, Original authentic

    All Anmsi components are from the original factory or agent Regular channel procurement

    Global Supply Chain

    Global Supply Chain

    Enables us to resolve all shortages of customers.efficient BOM materials offer and professional technical support.

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