Manufacturer Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature 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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RJP60D0DPK-01#T0

RJP60D0DPK-01#T0

RJH60D0 - INSULATED GATE BIPOLAR

Renesas

3,565 2.07

FFQ

Bulk - Obsolete - 600 V 45 A 90 A 2.2V @ 15V, 22A 140 W - Standard 45 nC 35ns/90ns 300V, 22A, 5Ohm, 15V - 150°C (TJ) Through Hole
RJH1BF7RDPQ-80#T2

RJH1BF7RDPQ-80#T2

RJH1BF7 - INSULATED GATE BIPOLAR

Renesas

2,522 5.75

FFQ

Bulk - Obsolete - 1100 V 60 A 100 A 2.35V @ 15V, 60A 250 W - Standard - - - - 150°C (TJ) Through Hole
RJH60D1DPP-E0#T2

RJH60D1DPP-E0#T2

RJH60D1 - INSULATED GATE BIPOLAR

Renesas

3,101 1.40

FFQ

Bulk - Obsolete Trench 600 V 20 A - 2.5V @ 15V, 10A 30 W 100µJ (on), 130µJ (off) Standard 13 nC 30ns/42ns 300V, 10A, 5Ohm, 15V 70 ns 150°C (TJ) Through Hole
RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2

RJH1DF7 - INSULATED GATE BIPOLAR

Renesas

400 5.17

FFQ

Bulk - Obsolete - 1350 V 60 A - 2.55V @ 15V, 35A 250 W - Standard - 58ns/144ns 600V, 35A, 5Ohm, 15V - 150°C (TJ) Through Hole
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  • Quality assurance, Original authentic

    Quality assurance, Original authentic

    All Anmsi components are from the original factory or agent Regular channel procurement

    Global Supply Chain

    Global Supply Chain

    Enables us to resolve all shortages of customers.efficient BOM materials offer and professional technical support.

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