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Manufacturer Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType



































































































































































































































































































































































































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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType
RN1310,LXHF

RN1310,LXHF

AUTO AEC-Q NPN BRT, Q1BSR=4.7K

Toshiba Semiconductor and Storage

 10,847 0.00

RFQ

 Tape & Reel (TR),Cut Tape (CT) - Active NPN - Pre-Biased 100 mA 50 V 4.7 kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250 MHz 100 mW Surface Mount
RN2308,LXHF

RN2308,LXHF

AUTO AEC-Q TR PNP BRT, Q1BSR=22K

Toshiba Semiconductor and Storage

 14,179 0.40

RFQ

 Tape & Reel (TR),Cut Tape (CT) - Active PNP - Pre-Biased 100 mA 50 V 22 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200 MHz 100 mW Surface Mount
RN2304,LXHF

RN2304,LXHF

AUTO AEC-Q TR PNP BRT, Q1BSR=47K

Toshiba Semiconductor and Storage

 13,355 0.40

RFQ

 Tape & Reel (TR),Cut Tape (CT) - Active PNP - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200 MHz 100 mW Surface Mount
RN2316,LXHF

RN2316,LXHF

AUTO AEC-Q TR PNP BRT, Q1BSR=4.7

Toshiba Semiconductor and Storage

 14,237 0.40

RFQ

 Tape & Reel (TR),Cut Tape (CT) - Active PNP - Pre-Biased 100 mA 50 V 4.7 kOhms 10 kOhms 50 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200 MHz 100 mW Surface Mount
RN2309,LXHF

RN2309,LXHF

AUTO AEC-Q TR PNP BRT, Q1BSR=47K

Toshiba Semiconductor and Storage

 11,121 0.40

RFQ

 Tape & Reel (TR),Cut Tape (CT) - Active PNP - Pre-Biased 100 mA 50 V 47 kOhms 22 kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200 MHz 100 mW Surface Mount
RN2311,LXHF

RN2311,LXHF

AUTO AEC-Q TR PNP BRT, Q1BSR=10K

Toshiba Semiconductor and Storage

 12,896 0.40

RFQ

 Tape & Reel (TR),Cut Tape (CT) - Active PNP - Pre-Biased 100 mA 50 V 10 kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200 MHz 100 mW Surface Mount
RN2310,LXHF

RN2310,LXHF

AUTO AEC-Q SINGLE PNP , R1=4.7KO

Toshiba Semiconductor and Storage

 11,116 0.40

RFQ

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 4.7 kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200 MHz 100 mW Surface Mount
RN1308,LXHF

RN1308,LXHF

AUTO AEC-Q SINGLE NPN , R1=22KOH

Toshiba Semiconductor and Storage

 11,892 0.40

RFQ

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active NPN - Pre-Biased 100 mA 50 V 22 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250 MHz 100 mW Surface Mount
DTB123TCHZGT116

DTB123TCHZGT116

DTB123TCHZG IS THE HIGH RELIABIL

Rohm Semiconductor

 11,115 0.42

RFQ

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 500 mA 40 V 2.2 kOhms - 100 @ 50mA, 5V 300mV @ 2.5mA, 50mA 500nA (ICBO) 200 MHz 200 mW Surface Mount
DTB114GCHZGT116

DTB114GCHZGT116

DTB114GCHZG IS THE HIGH RELIABIL

Rohm Semiconductor

 14,897 0.42

RFQ

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 500 mA 50 V - 10 kOhms 56 @ 50mA, 5V 300mV @ 2.5mA, 50mA 500nA (ICBO) 200 MHz 200 mW Surface Mount
KSR1101MTF

KSR1101MTF

SMALL SIGNAL BIPOLAR TRANSISTOR

Fairchild Semiconductor

 11,143 0.06

RFQ

 KSR1101MTF

Datasheet

 Bulk - Active NPN - Pre-Biased 100 mA 50 V 4.7 kOhms 4.7 kOhms 20 @ 10mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 250 MHz 200 mW Surface Mount
DTC144EET1H

DTC144EET1H

SS BIAS RES TRANS

onsemi

 11,021 0.07

RFQ

 Bulk * Active - - - - - - - - - - -
DTD743XETL

DTD743XETL

TRANS PREBIAS NPN 150MW EMT3

Rohm Semiconductor

 11,680 0.47

RFQ

 DTD743XETL

Datasheet

 Tape & Reel (TR),Cut Tape (CT) - Active NPN - Pre-Biased 200 mA 30 V 4.7 kOhms 10 kOhms 140 @ 100mA, 2V 300mV @ 2.5mA, 50mA 500nA 260 MHz 150 mW Surface Mount
GN1L4M-T2-A

GN1L4M-T2-A

SMALL SIGNAL BIPOLAR TRANSISTOR

Renesas Electronics America Inc

 2,651 0.10

RFQ

 GN1L4M-T2-A

Datasheet

 Bulk - Obsolete PNP - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 95 @ 50mA, 5V 200mV @ 250µA, 5mA 100nA (ICBO) - 150 mW Surface Mount
GA1L4M-T2-A

GA1L4M-T2-A

SMALL SIGNAL BIPOLAR TRANSISTOR

Renesas Electronics America Inc

 2,215 0.10

RFQ

 GA1L4M-T2-A

Datasheet

 Bulk - Obsolete NPN - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 95 @ 50mA, 5V 200mV @ 250µA, 5mA 100nA (ICBO) - 150 mW Surface Mount
DDTC144ELP-7

DDTC144ELP-7

TRANS PREBIAS NPN 250MW 3DFN

Diodes Incorporated

 10,336 0.44

RFQ

 DDTC144ELP-7

Datasheet

 Tape & Reel (TR),Cut Tape (CT) - Active NPN - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 68 @ 5mA, 5V 300mV @ 500µA, 10mA 500nA (ICBO) 250 MHz 250 mW Surface Mount
NTE2417

NTE2417

T-PNP SI WITH 22K RES

NTE Electronics, Inc

 11,640 0.62

RFQ

 NTE2417

Datasheet

 Bag - Active PNP - Pre-Biased 100 mA 50 V 22 kOhms 22 kOhms 50 @ 10mA, 5V 300mV @ 500µA, 10mA 500nA 200 MHz 200 mW Surface Mount
NTE2367

NTE2367

T-NPN SI DIGITAL 4.7K

NTE Electronics, Inc

 12,194 0.68

RFQ

 NTE2367

Datasheet

 Bag - Active NPN - Pre-Biased 100 mA 50 V 4.7 kOhms 4.7 kOhms 30 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250 MHz 300 mW Through Hole
NTE2414

NTE2414

T-NPN SI WITH 10K RES

NTE Electronics, Inc

 11,048 0.78

RFQ

 NTE2414

Datasheet

 Bag - Active NPN - Pre-Biased 100 mA 50 V 10 kOhms 10 kOhms 50 @ 10mA, 5V 300mV @ 500µA, 10mA 500nA 250 MHz 200 mW Surface Mount
NTE2355

NTE2355

T-NPN SI W/10K RESISTOR

NTE Electronics, Inc

 13,660 0.89

RFQ

 NTE2355

Datasheet

 Bag - Active NPN - Pre-Biased 100 mA 50 V 10 kOhms 10 kOhms 50 @ 10mA, 5V 300mV @ 500µA, 10mA 500nA 250 MHz 300 mW Through Hole
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