| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | UF3C065040T3SMOSFET N-CH 650V 54A TO220-3 | 4,334 | 13.71 | RFQ |   Datasheet | Tube | - | Active | N-Channel | - | 650 V | 54A (Tc) | 12V | 52mOhm @ 40A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | STW28NM50NMOSFET N-CH 500V 21A TO247-3 | 6,698 | 8.39 | RFQ |   Datasheet | Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 158mOhm @ 10.5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±25V | 1735 pF @ 25 V | - | 150W (Tc) | 150°C (TJ) | Through Hole | 
|   | IPP65R099CFD7AAKSA1MOSFET N-CH 650V 24A TO220-3 | 5,375 | 8.46 | RFQ |   Datasheet | Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 99mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | 
|   | FCH043N60MOSFET N-CH 600V 75A TO247-3 | 3,371 | 17.15 | RFQ |   Datasheet | Tube | SuperFET® II | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215 nC @ 10 V | ±20V | 12225 pF @ 400 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|  | C3M0045065DGEN 3 650V 45 M SIC MOSFET | 2,851 | 17.72 | RFQ |   Datasheet | Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 63 nC @ 15 V | +19V, -8V | 1621 pF @ 600 V | - | 176W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | 
|  | C3M0045065KGEN 3 650V 49A SIC MOSFET | 3,146 | 17.72 | RFQ |   Datasheet | Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 63 nC @ 15 V | +19V, -8V | 1621 pF @ 600 V | - | 176W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | 
|   | IPP60R022S7XKSA1MOSFET N-CH 600V 23A TO220-3 | 2,174 | 18.10 | RFQ | Tube | CoolMOS™S7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.44mA | 150 nC @ 12 V | ±20V | 5639 pF @ 300 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|   | IMZ120R060M1HXKSA1SICFET N-CH 1.2KV 36A TO247-4 | 4,436 | 18.32 | RFQ |   Datasheet | Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 15V, 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | +23V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | E3M0075120D1200V AUTOMOTIVE SIC 75MOHM FET | 2,656 | 18.73 | RFQ |   Datasheet | Tube | E-Series, Automotive | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 97.5mOhm @ 17.9A, 15V | 3.6V @ 5mA | 57 nC @ 15 V | +19V, -8V | 1480 pF @ 1000 V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IXTQ40N50L2MOSFET N-CH 500V 40A TO3P | 2,971 | 18.96 | RFQ |   Datasheet | Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 170mOhm @ 20A, 10V | 4.5V @ 250µA | 320 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IMZA65R048M1HXKSA1MOSFET 650V NCH SIC TRENCH | 1,890 | 19.20 | RFQ | Tube | - | Active | - | - | - | 39A (Tc) | - | - | - | - | - | - | - | - | - | - | |
|  | UF3C065030K3SSICFET N-CH 650V 85A TO247-3 | 3,537 | 19.91 | RFQ |   Datasheet | Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 650 V | 85A (Tc) | 12V | 35mOhm @ 50A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
| .jpg)  | IXFR48N60PMOSFET N-CH 600V 32A ISOPLUS247 | 3,017 | 19.93 | RFQ |   Datasheet | Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 150mOhm @ 24A, 10V | 5V @ 8mA | 150 nC @ 10 V | ±30V | 8860 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | TP65H050WSQAGANFET N-CH 650V 36A TO247-3 | 3,474 | 20.67 | RFQ |   Datasheet | Tube | Automotive, AEC-Q101 | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 36A (Tc) | 10V | 60mOhm @ 25A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | APT60N60BCSGMOSFET N-CH 600V 60A TO247 | 3,321 | 21.03 | RFQ |   Datasheet | Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IXTT40N50L2MOSFET N-CH 500V 40A TO268 | 1,181 | 21.05 | RFQ |   Datasheet | Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 170mOhm @ 20A, 10V | 4.5V @ 250µA | 320 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | SCT20N120AGSICFET N-CH 1200V 20A HIP247 | 2,944 | 21.24 | RFQ |   Datasheet | Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 239mOhm @ 10A, 20V | 3.5V @ 1mA | 45 nC @ 20 V | +25V, -10V | 650 pF @ 400 V | - | 153W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | 
|  | IPW65R048CFDAFKSA1MOSFET N-CH 650V 63.3A TO247-3 | 2,175 | 21.49 | RFQ |   Datasheet | Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63.3A (Tc) | 10V | 48mOhm @ 29.4A, 10V | 4.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 7440 pF @ 100 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | 
|   | IXFK78N50P3MOSFET N-CH 500V 78A TO264AA | 1,046 | 21.83 | RFQ |   Datasheet | Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 78A (Tc) | 10V | 68mOhm @ 500mA, 10V | 5V @ 4mA | 147 nC @ 10 V | ±30V | 9900 pF @ 25 V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | SCT3105KLGC11SICFET N-CH 1200V 24A TO247N | 1,706 | 22.40 | RFQ |   Datasheet | Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | Through Hole | 

All Anmsi components are from the original factory or agent Regular channel procurement

Enables us to resolve all shortages of customers.efficient BOM materials offer and professional technical support.