| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD60R380P6ATMA1XPD60R380 - LOW POWER_LEGACY |
6,710 | 1.00 |
RFQ |
Datasheet |
Bulk | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDC606PSMALL SIGNAL FIELD-EFFECT TRANSI |
11,506 | 0.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 4.5V | 26mOhm @ 6A, 4.5V | 1.5V @ 250µA | 25 nC @ 4.5 V | ±8V | 1699 pF @ 6 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFS7430PBFTRENCH <= 40V |
7,908 | 1.00 |
RFQ |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
IRF6623TRPBFIRF6623 - 12V-300V N-CHANNEL POW |
9,409 | 1.00 |
RFQ |
Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.2V @ 250µA | 17 nC @ 4.5 V | ±20V | 1360 pF @ 10 V | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
RF1S530SM9A14A, 100V, 0.16OHM, N-CHANNEL PO |
8,322 | 1.00 |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AUIRFB8407AUIRFB8407 - 20V-40V N-CHANNEL A |
8,385 | 1.00 |
RFQ |
Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
AUIRF1405ZS-7PAUIRF1405 - 55V-60V N-CHANNEL AU |
6,960 | 1.00 |
RFQ |
Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
AUIRF6218SAUIRF6218 - 20V-150V P-CHANNEL A |
9,643 | 1.00 |
RFQ |
Datasheet |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
RFP12N10L12A, 100V, 0.2OHM, N-CHANNEL, MO |
7,338 | 1.00 |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK9635-55A,118N-CHANNEL TRENCHMOS LOGIC LEVEL |
7,759 | 1.00 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 34A (Tc) | 5V, 10V | 32mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 1173 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
BUK9E08-55B,127NEXPERIA BUK9E08-55B - 75A, 55V |
13,461 | 0.00 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 5V, 10V | 7mOhm @ 25A, 10V | 2V @ 1mA | 45 nC @ 5 V | ±15V | 5280 pF @ 25 V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | |
|
BLA1011-10BLA1011-10 - N-CHANNEL LDMOS AVI |
6,781 | 1.00 |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFB5620PBFIRFB5620 - 12V-300V N-CHANNEL PO |
5,631 | 1.00 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 25A (Tc) | 10V | 72.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
MCH3382-TL-HSMALL SIGNAL FIELD-EFFECT TRANSI |
12,787 | 0.00 |
RFQ |
Datasheet |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2A (Ta) | 1.8V, 4.5V | 198mOhm @ 1A, 4.5V | - | 2.3 nC @ 4.5 V | ±9V | 170 pF @ 6 V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount |
|
IPW60R0706P600V COOLMOS N-CHANNEL POWER MOS |
7,814 | 1.00 |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK9880-55/CU135NEXPERIA BUK9880-55 3.5A, 55V, 0 |
7,174 | 1.00 |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPL60R095CFD7AUMA1HIGH POWER_NEW |
7,429 | 1.00 |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDC6302PSMALL SIGNAL FIELD-EFFECT TRANSI |
5,623 | 1.00 |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPI120N10S403AKSA1IPI120N10S4-03 - 75V-100V N-CHAN |
5,830 | 1.00 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
NX7002BKMBYLNEXPERIA NX7002B - 60V, N-CHANNE |
7,282 | 1.00 |
RFQ |
Datasheet |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1 nC @ 10 V | ±20V | 23.6 pF @ 10 V | - | 350mW (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
All Anmsi components are from the original factory or agent Regular channel procurement
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