Manufacturer Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType























































































































































































































































































































































































































































































































































































































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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType
J174,126

J174,126

JFET P-CH 30V 400MW TO92-3

NXP USA Inc.

2,211 0.00

RFQ

J174,126

Datasheet

Tape & Box (TB) - Obsolete P-Channel 30 V 30 V 20 mA @ 15 V - 5 V @ 10 nA 8pF @ 10V (VGS) 85 Ohms 400 mW 150°C (TJ) Through Hole
J176,126

J176,126

JFET P-CH 30V 400MW TO92-3

NXP USA Inc.

3,195 0.00

RFQ

J176,126

Datasheet

Tape & Box (TB) - Obsolete P-Channel 30 V 30 V 2 mA @ 15 V - 1 V @ 10 nA 8pF @ 10V (VGS) 250 Ohms 400 mW 150°C (TJ) Through Hole
J108,126

J108,126

JFET N-CH 25V 0.4W SOT54

NXP USA Inc.

3,339 0.00

RFQ

J108,126

Datasheet

Tape & Box (TB) - Obsolete N-Channel 25 V 25 V 80 mA @ 5 V - 10 V @ 1 µA 30pF @ 0V 8 Ohms 400 mW 150°C (TJ) Through Hole
J110,126

J110,126

JFET N-CH 25V 0.4W SOT54

NXP USA Inc.

3,113 0.00

RFQ

J110,126

Datasheet

Tape & Box (TB) - Obsolete N-Channel 25 V 25 V 10 mA @ 5 V - 4 V @ 1 µA 30pF @ 0V 18 Ohms 400 mW 150°C (TJ) Through Hole
IJW120R070T1FKSA1

IJW120R070T1FKSA1

IJW120R070 - POWER FIELD-EFFECT

Infineon Technologies

1,022 29.32

RFQ

IJW120R070T1FKSA1

Datasheet

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  • Quality assurance, Original authentic

    Quality assurance, Original authentic

    All Anmsi components are from the original factory or agent Regular channel procurement

    Global Supply Chain

    Global Supply Chain

    Enables us to resolve all shortages of customers.efficient BOM materials offer and professional technical support.

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